Abstract
Two-deimentional Born scatterin for the non-relativistic case is considered, the purpose being to investigate transport properties in mono-layer Graphene subject to an applied parallel electrical field. Solutions for the Probability Density Current (PDC) are obtained in the Fresnel zone which provides a model for simulating the PDC subject to membrane crumpling. In this context a Random Fractal Defect Model is considered which is used to assess the effect of (Fractal) crumpling on the PDC.
| Original language | English |
|---|---|
| Pages (from-to) | 913-926 |
| Journal | Mathematic Aeterna |
| Volume | 4 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1 Jan 2014 |
Keywords
- Two-dimensional Born scattering
- non-relativistic case
- transport properties
- mono-layer Graphene
- applied parallel electrical field
- Probability Density Current
- Fresnel zone
- Random Fractal Defect Model
- membrane crumpling