The effects of recombination lifetime on efficiency and JV characteristics of InxGa1-xN/GaN quantum dot intermediate band solar cell

Nima Es'Haghi Gorji, Hossein Movla, Foozieh Sohrabi, Ahmad Hosseinpour, Meisam Rezaei, Hassan Babaei

Research output: Contribution to journalArticlepeer-review

Abstract

We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a pin structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and currentvoltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration.

Original languageEnglish
Pages (from-to)2353-2357
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number9
DOIs
Publication statusPublished - Jul 2010
Externally publishedYes

Keywords

  • Energy conversion efficiency
  • InGaN QDs
  • QD intermediate solar cells

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