The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

P. S. Parfenov; A. P. Litvin; D. A. Onishchuk; K. A. Gonchar; K. Berwick; A. V. Fedorov; A. V. Baranov

doi:10.1134/S0030400X20050100

The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

P. S. Parfenov
, A. P. Litvin
, D. A. Onishchuk
, K. A. Gonchar
, K. Berwick
, A. V. Fedorov
, A. V. Baranov

Technological University Dublin

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.

Original language	English
Pages (from-to)	674-677
Number of pages	4
Journal	Optics and Spectroscopy
Volume	128
Issue number	5
DOIs	https://doi.org/10.1134/S0030400X20050100
Publication status	Published - 1 May 2020

Keywords

near-infrared detector
photon counting
single-photon avalanche diode (SPAD), pile-up, counting loss

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10.1134/S0030400X20050100

https://arrow.tudublin.ie/engscheleart2/265Licence: CC BY-NC-SA

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title = "The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence",

abstract = "Abstract: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.",

keywords = "near-infrared detector, photon counting, single-photon avalanche diode (SPAD), pile-up, counting loss",

author = "Parfenov, \{P. S.\} and Litvin, \{A. P.\} and Onishchuk, \{D. A.\} and Gonchar, \{K. A.\} and K. Berwick and Fedorov, \{A. V.\} and Baranov, \{A. V.\}",

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doi = "10.1134/S0030400X20050100",

language = "English",

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T1 - The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

AU - Parfenov, P. S.

AU - Litvin, A. P.

AU - Onishchuk, D. A.

AU - Gonchar, K. A.

AU - Berwick, K.

AU - Fedorov, A. V.

AU - Baranov, A. V.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Abstract: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.

AB - Abstract: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.

KW - near-infrared detector

KW - photon counting

KW - single-photon avalanche diode (SPAD), pile-up, counting loss

UR - https://www.scopus.com/pages/publications/85091405200

U2 - 10.1134/S0030400X20050100

DO - 10.1134/S0030400X20050100

M3 - Article

SN - 0030-400X

VL - 128

SP - 674

EP - 677

JO - Optics and Spectroscopy

JF - Optics and Spectroscopy

IS - 5

ER -

The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

Abstract

Keywords

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