TY - JOUR
T1 - Surface photovoltage spectroscopy and AFM analysis of CIGSe thin film solar cells
AU - Gorji, Nima E.
AU - Reggiani, Ugo
AU - Sandrolini, Leonardo
N1 - Publisher Copyright:
© 2015 Nima E. Gorji et al.
PY - 2015
Y1 - 2015
N2 - The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms) of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1μm.
AB - The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms) of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1μm.
UR - http://www.scopus.com/inward/record.url?scp=84935023450&partnerID=8YFLogxK
U2 - 10.1155/2015/829530
DO - 10.1155/2015/829530
M3 - Article
AN - SCOPUS:84935023450
SN - 1110-662X
VL - 2015
JO - International Journal of Photoenergy
JF - International Journal of Photoenergy
M1 - 829530
ER -