Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Cormac Moore; Tatiana S. Perova; Barry J. Kennedy; Kevin Berwick; I. I. Shaganov; R. A. Moore

doi:10.1117/12.464024

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Cormac Moore, Tatiana S. Perova, Barry J. Kennedy, Kevin Berwick, I. I. Shaganov, R. A. Moore

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, SiO₂ and fluorine and phosphorous doped SiO ₂ thin films are investigated using FTIR and Roman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are also discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

Original language	English
Pages (from-to)	1247-1256
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4876
Issue number	2
DOIs	https://doi.org/10.1117/12.464024
Publication status	Published - 2002
Event	Opto-Ireland 2002: Optics and Photonics Technologies and Applications - Galway, Ireland Duration: 5 Sep 2002 → 6 Sep 2002

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title = "Study of structure and quality of different silicon oxides using FTIR and Raman microscopy",

abstract = "In this work, SiO2 and fluorine and phosphorous doped SiO 2 thin films are investigated using FTIR and Roman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are also discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.",

author = "Cormac Moore and Perova, \{Tatiana S.\} and Kennedy, \{Barry J.\} and Kevin Berwick and Shaganov, \{I. I.\} and Moore, \{R. A.\}",

year = "2002",

doi = "10.1117/12.464024",

language = "English",

volume = "4876",

pages = "1247--1256",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "2",

note = "Opto-Ireland 2002: Optics and Photonics Technologies and Applications ; Conference date: 05-09-2002 Through 06-09-2002",

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TY - JOUR

T1 - Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

AU - Moore, Cormac

AU - Perova, Tatiana S.

AU - Kennedy, Barry J.

AU - Berwick, Kevin

AU - Shaganov, I. I.

AU - Moore, R. A.

PY - 2002

Y1 - 2002

N2 - In this work, SiO2 and fluorine and phosphorous doped SiO 2 thin films are investigated using FTIR and Roman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are also discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

AB - In this work, SiO2 and fluorine and phosphorous doped SiO 2 thin films are investigated using FTIR and Roman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are also discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

UR - https://www.scopus.com/pages/publications/0043234145

U2 - 10.1117/12.464024

DO - 10.1117/12.464024

M3 - Conference article

SN - 0277-786X

VL - 4876

SP - 1247

EP - 1256

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 2

T2 - Opto-Ireland 2002: Optics and Photonics Technologies and Applications

Y2 - 5 September 2002 through 6 September 2002

ER -

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Abstract

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