Abstract
The performance of all-optical demultiplexing in semiconductor devices for high-speed optical time division multiplexing (OTDM) networks was analyzed using two-photon absorption (TPA). A GaAs/AlAs PIN micro-cavity photodetector grown on a GaAs substrate was fabricated for TPA at 1550nm. The device comprised a 0.459μm GaAs active region embedded between two GaAs/AlAs active region that was embedded between two GaAs/AlAs Bragg mirrors. The high speed OTDM signal and the control pulses were optically coupled together and were incident on the device with their relative arrival time adjusted via a variable optical delay in the control arm.
| Original language | English |
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| Pages (from-to) | 975-976 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: 7 Nov 2004 → 11 Nov 2004 |