Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge

D. M. Popovic; V. Milosavljevic; A. Zekic; N. Romcevic; S. Daniels

doi:10.1063/1.3543838

Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge

D. M. Popovic, V. Milosavljevic, A. Zekic, N. Romcevic, S. Daniels

Research output: Contribution to journal › Article › peer-review

Abstract

Low-k materials such as silicon dioxide (SiO₂) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO₂ single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm-1 is observed for the treated SiO₂ wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.

Original language	English
Article number	051503
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3543838
Publication status	Published - 31 Jan 2011
Externally published	Yes

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title = "Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge",

abstract = "Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2 single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm-1 is observed for the treated SiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.",

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AU - Popovic, D. M.

AU - Milosavljevic, V.

AU - Zekic, A.

AU - Romcevic, N.

AU - Daniels, S.

PY - 2011/1/31

Y1 - 2011/1/31

N2 - Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2 single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm-1 is observed for the treated SiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.

AB - Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2 single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm-1 is observed for the treated SiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

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Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge

Abstract

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