Photocurrent and surface recombination mechanisms in the In xGa1-xN/GaN different-sized Quantum dot solar cells

Hossein Movla; Foozieh Sohrabi; Jafar Fathi; Hassan Babaei; Arash Nikniazi; Khadije Khalili; Nima Es haghi Gorji

doi:10.3906/fiz-1002-19

Photocurrent and surface recombination mechanisms in the In _xGa_1-xN/GaN different-sized Quantum dot solar cells

Hossein Movla, Foozieh Sohrabi, Jafar Fathi, Hassan Babaei, Arash Nikniazi, Khadije Khalili, Nima Es haghi Gorji

Research output: Contribution to journal › Article › peer-review

Abstract

We present a p-i-n structured solar cell with stacked layers of In _xGa_1-x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in In_x Ga_1-x N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a "rainbow" solar cell can be designed.

Original language	English
Pages (from-to)	97-106
Number of pages	10
Journal	Turkish Journal of Physics
Volume	34
Issue number	2
DOIs	https://doi.org/10.3906/fiz-1002-19
Publication status	Published - 2010
Externally published	Yes

Keywords

In GaN Quantum Dots
P-i-n solar cells
Photocurrent
Surface recombination rate

Access to Document

10.3906/fiz-1002-19

Cite this

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title = "Photocurrent and surface recombination mechanisms in the In xGa1-xN/GaN different-sized Quantum dot solar cells",

abstract = "We present a p-i-n structured solar cell with stacked layers of In xGa1-x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1-x N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a {"}rainbow{"} solar cell can be designed.",

keywords = "In GaN Quantum Dots, P-i-n solar cells, Photocurrent, Surface recombination rate",

author = "Hossein Movla and Foozieh Sohrabi and Jafar Fathi and Hassan Babaei and Arash Nikniazi and Khadije Khalili and Gorji, \{Nima Es haghi\}",

year = "2010",

doi = "10.3906/fiz-1002-19",

language = "English",

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pages = "97--106",

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T1 - Photocurrent and surface recombination mechanisms in the In xGa1-xN/GaN different-sized Quantum dot solar cells

AU - Movla, Hossein

AU - Sohrabi, Foozieh

AU - Fathi, Jafar

AU - Babaei, Hassan

AU - Nikniazi, Arash

AU - Khalili, Khadije

AU - Gorji, Nima Es haghi

PY - 2010

Y1 - 2010

N2 - We present a p-i-n structured solar cell with stacked layers of In xGa1-x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1-x N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a "rainbow" solar cell can be designed.

AB - We present a p-i-n structured solar cell with stacked layers of In xGa1-x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1-x N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a "rainbow" solar cell can be designed.

KW - In GaN Quantum Dots

KW - P-i-n solar cells

KW - Photocurrent

KW - Surface recombination rate

UR - https://www.scopus.com/pages/publications/78651295133

U2 - 10.3906/fiz-1002-19

DO - 10.3906/fiz-1002-19

M3 - Article

AN - SCOPUS:78651295133

SN - 1300-0101

VL - 34

SP - 97

EP - 106

JO - Turkish Journal of Physics

JF - Turkish Journal of Physics

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