Abstract
We present a p-i-n structured solar cell with stacked layers of In xGa1-x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1-x N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a "rainbow" solar cell can be designed.
Original language | English |
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Pages (from-to) | 97-106 |
Number of pages | 10 |
Journal | Turkish Journal of Physics |
Volume | 34 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2010 |
Externally published | Yes |
Keywords
- In GaN Quantum Dots
- P-i-n solar cells
- Photocurrent
- Surface recombination rate