Photocurrent and surface recombination mechanisms in the In xGa1-xN/GaN different-sized Quantum dot solar cells

Hossein Movla, Foozieh Sohrabi, Jafar Fathi, Hassan Babaei, Arash Nikniazi, Khadije Khalili, Nima Es haghi Gorji

Research output: Contribution to journalArticlepeer-review

Abstract

We present a p-i-n structured solar cell with stacked layers of In xGa1-x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1-x N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a "rainbow" solar cell can be designed.

Original languageEnglish
Pages (from-to)97-106
Number of pages10
JournalTurkish Journal of Physics
Volume34
Issue number2
DOIs
Publication statusPublished - 2010
Externally publishedYes

Keywords

  • In GaN Quantum Dots
  • P-i-n solar cells
  • Photocurrent
  • Surface recombination rate

Fingerprint

Dive into the research topics of 'Photocurrent and surface recombination mechanisms in the In xGa1-xN/GaN different-sized Quantum dot solar cells'. Together they form a unique fingerprint.

Cite this