Abstract
Recently, semiconductor nanograting layers have been introduced and their optical properties have been studied. Spectroscopic ellipsometry has shown that nanograting significantly modifies the dielectric function of c-Si layers. Photoluminescence spectroscopy reveals the emergence of an emission band with a remarkable peak structure. It has been observed that nanograting also alters the electronic and magnetic properties. In this study, we investigate the quantum efficiency and spectral response of Si p-n junctions fabricated using subwavelength grating layers and aperiodically nanostructured layers. Our findings indicate that the quantum efficiency and spectral response are enhanced in the case of nanograting p-n junctions compared to plain reference junctions. Aperiodically nanostructured junctions exhibit similar results to nanograting junctions. However, aperiodic nanostructuring is a more straightforward fabrication method and, consequently, more appealing for the solar cell industry.
| Original language | English |
|---|---|
| Article number | 1028 |
| Journal | Optical and Quantum Electronics |
| Volume | 55 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 2023 |
Keywords
- Nanograting
- p-n junction
- Quantum efficiency
- Spectral response