Abstract
Picosecond time resolved photoluminescence and photoconductivity measurements are performed to investigate the influence of high intensity illumination on the properties of Fullerene crystals. A highly nonlinear dependence of both the photoluminescence characteristics and the photoconductive response of the fullerenes is seen and temperature dependent measurements indicate that the nonlinear processes are associated with an insulator-metal phase transition in the material, and thus that the electronic properties of the excited state are dramatically altered at high excited state densities. Application of a simple phenomenological model to calculate the contribution of exchange and correlation energies supports the feasibility of such an interpretation. A further manifestation of this behaviour is the emergence of a broadband electroluminescent emission above a critical injection current density.
Original language | English |
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Pages (from-to) | 160-168 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 2284 |
DOIs | |
Publication status | Published - 28 Nov 1994 |
Externally published | Yes |
Event | Fullerenes and Photonics 1994 - San Diego, United States Duration: 24 Jul 1994 → 29 Jul 1994 |