Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application

Faridah L. Supian; Tim H. Richardson; Alexei V. Nabok; Mary Deasy; M. Syahriman M. Azmi

doi:10.4028/www.scientific.net/AMR.895.520

Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application

Faridah L. Supian, Tim H. Richardson, Alexei V. Nabok, Mary Deasy, M. Syahriman M. Azmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The characteristics of cadmium sulphide (CdS) and lead sulphide (PbS) nanoparticles, grown inside Langmuir-Blodgett (LB) multilayer films of 5,11,17,23-tetra-tert-butyl-25,27-dicarboxymethoxy-26,28-dihydroxycalix[4]arene (I), have been studied using ellipsometry, UVvisible spectroscopy, and transmission electron microscopy (TEM). Multilayer films were formed by transferring a floating Langmuir monolayer of I onto substrates using LB deposition and water subphase containing Pb²⁺ or Cd²⁺ ions. The nanoparticles were growth by exposing cadmium- or lead-containing multilayer films of I (20-80 monolayers thick) to hydrogen sulphide (H₂S) gas for 12 hours. By Gaussian fitting of the absorbance - energy spectra, the size of the clusters and their dispersion were found to be 1.43±0.18 nm and 1.21±0.05 nm for CdS and PbS respectively. This is the first time that such thick LB films of an amphiphilic compound possessing such high thermal stability (m.pt. ~270°C) have been used as the vehicle for the formation of CdS and PbS semiconductor particles.

Original language	English
Title of host publication	Solid State Science and Technology IV
Pages	520-525
Number of pages	6
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.895.520
Publication status	Published - 2014
Event	4th International Conference on Solid State Science and Technology, ICSSST 2012 - Melaka, Malaysia Duration: 18 Dec 2013 → 20 Dec 2013

Publication series

Name	Advanced Materials Research
Volume	895
ISSN (Print)	1022-6680

Conference

Conference	4th International Conference on Solid State Science and Technology, ICSSST 2012
Country/Territory	Malaysia
City	Melaka
Period	18/12/13 → 20/12/13

Keywords

Cadmium sulphide (CdS)
Calix[4]arene
Ellipsometry
Langmuir- Blodgett (LB)
Lead sulphide (PBS)
Nanoparticles
Transmission electron microscopy (TEM)
UV-visible spectroscopy (UV-Vis)

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10.4028/www.scientific.net/AMR.895.520

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Cite this

@inproceedings{112e0c1411c84f83abcd63e800f23192,

title = "Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application",

abstract = "The characteristics of cadmium sulphide (CdS) and lead sulphide (PbS) nanoparticles, grown inside Langmuir-Blodgett (LB) multilayer films of 5,11,17,23-tetra-tert-butyl-25,27-dicarboxymethoxy-26,28-dihydroxycalix[4]arene (I), have been studied using ellipsometry, UVvisible spectroscopy, and transmission electron microscopy (TEM). Multilayer films were formed by transferring a floating Langmuir monolayer of I onto substrates using LB deposition and water subphase containing Pb2+ or Cd2+ ions. The nanoparticles were growth by exposing cadmium- or lead-containing multilayer films of I (20-80 monolayers thick) to hydrogen sulphide (H2S) gas for 12 hours. By Gaussian fitting of the absorbance - energy spectra, the size of the clusters and their dispersion were found to be 1.43±0.18 nm and 1.21±0.05 nm for CdS and PbS respectively. This is the first time that such thick LB films of an amphiphilic compound possessing such high thermal stability (m.pt. ~270°C) have been used as the vehicle for the formation of CdS and PbS semiconductor particles.",

keywords = "Cadmium sulphide (CdS), Calix[4]arene, Ellipsometry, Langmuir- Blodgett (LB), Lead sulphide (PBS), Nanoparticles, Transmission electron microscopy (TEM), UV-visible spectroscopy (UV-Vis)",

author = "Supian, {Faridah L.} and Richardson, {Tim H.} and Nabok, {Alexei V.} and Mary Deasy and Azmi, {M. Syahriman M.}",

year = "2014",

doi = "10.4028/www.scientific.net/AMR.895.520",

language = "English",

isbn = "9783038350330",

series = "Advanced Materials Research",

pages = "520--525",

booktitle = "Solid State Science and Technology IV",

note = "4th International Conference on Solid State Science and Technology, ICSSST 2012 ; Conference date: 18-12-2013 Through 20-12-2013",

}

Supian, FL, Richardson, TH, Nabok, AV, Deasy, M & Azmi, MSM 2014, Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application. in Solid State Science and Technology IV. Advanced Materials Research, vol. 895, pp. 520-525, 4th International Conference on Solid State Science and Technology, ICSSST 2012, Melaka, Malaysia, 18/12/13. https://doi.org/10.4028/www.scientific.net/AMR.895.520

Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application. / Supian, Faridah L.; Richardson, Tim H.; Nabok, Alexei V. et al.
Solid State Science and Technology IV. 2014. p. 520-525 (Advanced Materials Research; Vol. 895).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application

AU - Supian, Faridah L.

AU - Richardson, Tim H.

AU - Nabok, Alexei V.

AU - Deasy, Mary

AU - Azmi, M. Syahriman M.

PY - 2014

Y1 - 2014

N2 - The characteristics of cadmium sulphide (CdS) and lead sulphide (PbS) nanoparticles, grown inside Langmuir-Blodgett (LB) multilayer films of 5,11,17,23-tetra-tert-butyl-25,27-dicarboxymethoxy-26,28-dihydroxycalix[4]arene (I), have been studied using ellipsometry, UVvisible spectroscopy, and transmission electron microscopy (TEM). Multilayer films were formed by transferring a floating Langmuir monolayer of I onto substrates using LB deposition and water subphase containing Pb2+ or Cd2+ ions. The nanoparticles were growth by exposing cadmium- or lead-containing multilayer films of I (20-80 monolayers thick) to hydrogen sulphide (H2S) gas for 12 hours. By Gaussian fitting of the absorbance - energy spectra, the size of the clusters and their dispersion were found to be 1.43±0.18 nm and 1.21±0.05 nm for CdS and PbS respectively. This is the first time that such thick LB films of an amphiphilic compound possessing such high thermal stability (m.pt. ~270°C) have been used as the vehicle for the formation of CdS and PbS semiconductor particles.

AB - The characteristics of cadmium sulphide (CdS) and lead sulphide (PbS) nanoparticles, grown inside Langmuir-Blodgett (LB) multilayer films of 5,11,17,23-tetra-tert-butyl-25,27-dicarboxymethoxy-26,28-dihydroxycalix[4]arene (I), have been studied using ellipsometry, UVvisible spectroscopy, and transmission electron microscopy (TEM). Multilayer films were formed by transferring a floating Langmuir monolayer of I onto substrates using LB deposition and water subphase containing Pb2+ or Cd2+ ions. The nanoparticles were growth by exposing cadmium- or lead-containing multilayer films of I (20-80 monolayers thick) to hydrogen sulphide (H2S) gas for 12 hours. By Gaussian fitting of the absorbance - energy spectra, the size of the clusters and their dispersion were found to be 1.43±0.18 nm and 1.21±0.05 nm for CdS and PbS respectively. This is the first time that such thick LB films of an amphiphilic compound possessing such high thermal stability (m.pt. ~270°C) have been used as the vehicle for the formation of CdS and PbS semiconductor particles.

KW - Cadmium sulphide (CdS)

KW - Calix[4]arene

KW - Ellipsometry

KW - Langmuir- Blodgett (LB)

KW - Lead sulphide (PBS)

KW - Nanoparticles

KW - Transmission electron microscopy (TEM)

KW - UV-visible spectroscopy (UV-Vis)

UR - http://www.scopus.com/inward/record.url?scp=84896883173&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.895.520

DO - 10.4028/www.scientific.net/AMR.895.520

M3 - Conference contribution

AN - SCOPUS:84896883173

SN - 9783038350330

T3 - Advanced Materials Research

SP - 520

EP - 525

BT - Solid State Science and Technology IV

T2 - 4th International Conference on Solid State Science and Technology, ICSSST 2012

Y2 - 18 December 2013 through 20 December 2013

ER -

Nanoscale growth of CdS and PbS semiconductor within calix[4]arene Langmuir- Blodgett LB film for ion sensing application

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Keywords

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