Abstract
The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.
Original language | English |
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Article number | 122001 |
Journal | Journal of Semiconductors |
Volume | 35 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Dec 2014 |
Externally published | Yes |
Keywords
- CdTe
- defect distribution
- degradation
- ion implantation
- ultrathin films