Many-body effects in the highly excited state of fullerenes - Comparison to indirect band-gap semiconductors

The highly excited state of fullerenes is characterised by a luminescence output which is dependent on the cube of the input intensity. This nonlinear emission is red shifted from the low-level emission and has a long, intensity dependent lifetime. Under similar irradiation conditions, the photoconductive response is seen to increase with the cube of the input intensity and the photocurrent in the highly excited state is observed to be largely independent of temperature, contrasting sharply with the thermally activated behaviour at low excitation densities. The degree of nonlinearity of the observed phenomena exclude an interpretation in terms of intra-molecular processes and the temperature dependence of the photoconductive response is suggestive of a Mott-like transition. The nonlinear behaviour is compared to that of indirect band-gap semiconductors in which the origin of similar nonlinear phenomena in the highly excited state luminescence and photoconductivity are explained in terms of electron-hole droplet formation. The similarities of the behaviours leads to a consideration of exchange and correlation energies in fullerenes, which are calculated according to a phenomenological model. Estimates of the contributions are consistent with a Mott-like transition at high excitation densities and an excess exchange/correlation energy in the highly excited state of ∼150 meV.