Investigation of radio frequency low noise amplifier design using source pull techniques at 2.4GHz

Kansheng Yang, Brian Keogh, Max J. Ammann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, e-pHEMT transistor noise performance is investigated at the transistor-antenna interface of a 2.45 GHz narrow band front-end. The research focuses on the trade-off between acceptable gain and Noise Figure under the constraint of minimum power consumption specifically 2.6V and 9mA (23.4mW). The design method optimises the matching at the input of the transistor using source pull techniques, combined with adaptive auto tuning components. Fabrication and experimental tests of prototype hardware are compared with simulations. Improvement is reported between two designs: 15 dB Gain, 1 dB Noise figure (NF) and 12.5 dB gain, 0.8 dB Noise figure. The 1-dB input compression point is-6.3 dBm. A passive Active Integrated Antenna (AIA) is intended to match the interface of the particular low noise transistor.

Original languageEnglish
Title of host publicationIET Conference Publications
PublisherInstitution of Engineering and Technology
Pages129-134
Number of pages6
EditionCP639
ISBN (Print)9781849199247
DOIs
Publication statusPublished - 2014
Event25th IET Irish Signals and Systems Conference, ISSC 2014 and China-Ireland International Conference on Information and Communications Technologies, CIICT 2014 - Limerick, Ireland
Duration: 26 Jun 201427 Jun 2014

Publication series

NameIET Conference Publications
NumberCP639
Volume2014

Conference

Conference25th IET Irish Signals and Systems Conference, ISSC 2014 and China-Ireland International Conference on Information and Communications Technologies, CIICT 2014
Country/TerritoryIreland
CityLimerick
Period26/06/1427/06/14

Keywords

  • Active Integrated Antenna (AIA)
  • Noise Figure (NF)
  • Source pull
  • Ultra-low power

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