In-situ Raman spectroscopy of electronic processes in fullerene thin films

S. B. Phelan; B. S. O'Connell; G. Farrell; G. Chambers; H. J. Byrne

doi:10.1557/proc-725-p10.8

In-situ Raman spectroscopy of electronic processes in fullerene thin films

S. B. Phelan, B. S. O'Connell, G. Farrell, G. Chambers, H. J. Byrne

Research output: Contribution to journal › Conference article › peer-review

Abstract

The current voltage characteristics of C₆₀ thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C₆₀ film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Original language	English
Pages (from-to)	261-266
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	725
DOIs	https://doi.org/10.1557/proc-725-p10.8
Publication status	Published - 2002
Event	Organic and Polymeric materials and Devices - Optical, Electrical and Optoelectronic Properties - San Francisco, CA, United States Duration: 1 Apr 2002 → 5 Apr 2002

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10.1557/proc-725-p10.8

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title = "In-situ Raman spectroscopy of electronic processes in fullerene thin films",

abstract = "The current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.",

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year = "2002",

doi = "10.1557/proc-725-p10.8",

language = "English",

volume = "725",

pages = "261--266",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Organic and Polymeric materials and Devices - Optical, Electrical and Optoelectronic Properties ; Conference date: 01-04-2002 Through 05-04-2002",

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TY - JOUR

T1 - In-situ Raman spectroscopy of electronic processes in fullerene thin films

AU - Phelan, S. B.

AU - O'Connell, B. S.

AU - Farrell, G.

AU - Chambers, G.

AU - Byrne, H. J.

PY - 2002

Y1 - 2002

N2 - The current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

AB - The current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

UR - https://www.scopus.com/pages/publications/0036457768

U2 - 10.1557/proc-725-p10.8

DO - 10.1557/proc-725-p10.8

M3 - Conference article

AN - SCOPUS:0036457768

SN - 0272-9172

VL - 725

SP - 261

EP - 266

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Organic and Polymeric materials and Devices - Optical, Electrical and Optoelectronic Properties

Y2 - 1 April 2002 through 5 April 2002

ER -

In-situ Raman spectroscopy of electronic processes in fullerene thin films

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