Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor

John Cassidy; Stanley Pons; Jiří Janata

doi:10.1021/ac00121a035

Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor

John Cassidy, Stanley Pons, Jiří Janata

Research output: Contribution to journal › Article › peer-review

Abstract

A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemlcally deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions, particularly on the presence of oxygen. If the device is tested in air, the dynamic range logarithmically spans 5 decades of partial pressure of hydrogen.

Original language	English
Pages (from-to)	1757-1761
Number of pages	5
Journal	Analytical Chemistry
Volume	58
Issue number	8
DOIs	https://doi.org/10.1021/ac00121a035
Publication status	Published - Jul 1986
Externally published	Yes

Access to Document

10.1021/ac00121a035

Cite this

@article{33265c933ac347c082efaf26c8116a2b,

title = "Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor",

abstract = "A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemlcally deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions, particularly on the presence of oxygen. If the device is tested in air, the dynamic range logarithmically spans 5 decades of partial pressure of hydrogen.",

author = "John Cassidy and Stanley Pons and Ji{\v r}{\'i} Janata",

year = "1986",

month = jul,

doi = "10.1021/ac00121a035",

language = "English",

volume = "58",

pages = "1757--1761",

journal = "Analytical Chemistry",

issn = "0003-2700",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor

AU - Cassidy, John

AU - Pons, Stanley

AU - Janata, Jiří

PY - 1986/7

Y1 - 1986/7

N2 - A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemlcally deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions, particularly on the presence of oxygen. If the device is tested in air, the dynamic range logarithmically spans 5 decades of partial pressure of hydrogen.

AB - A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemlcally deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions, particularly on the presence of oxygen. If the device is tested in air, the dynamic range logarithmically spans 5 decades of partial pressure of hydrogen.

UR - https://www.scopus.com/pages/publications/0022753020

U2 - 10.1021/ac00121a035

DO - 10.1021/ac00121a035

M3 - Article

AN - SCOPUS:0022753020

SN - 0003-2700

VL - 58

SP - 1757

EP - 1761

JO - Analytical Chemistry

JF - Analytical Chemistry

IS - 8

ER -

Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor

Abstract

Access to Document

Fingerprint

Cite this