Graded band gap CIGS solar cells considering the valence band widening

Nima E. Gorji, Ugo Reggiani, Leonardo Sandrolini

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

CIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the space charge region and back surface region of the absorber layer are proposed in this paper. In all the examined profiles the VB widening effects on the performance parameters by promoting the carrier transformation, hole passivation and carrier collection in the cell are considered. On the basis of the results, an optimal graded band gap structure is proposed and considered with a design closer to the reality where the VB offset is created during the band gap grading processes.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages906-908
Number of pages3
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period3/06/128/06/12

Keywords

  • band gap grading
  • charge transfer
  • CIGS solar cells
  • valence band widening

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