Deposition and doping of CdS/CdTe thin film solar cells

Nima E. Gorji

doi:10.1088/1674-4926/36/5/054001

Deposition and doping of CdS/CdTe thin film solar cells

Research output: Contribution to journal › Article › peer-review

Abstract

1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O₂-free devices are compared after CdCl₂ treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current-voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices.

Original language	English
Article number	054001
Journal	Journal of Semiconductors
Volume	36
Issue number	5
DOIs	https://doi.org/10.1088/1674-4926/36/5/054001
Publication status	Published - 1 May 2015
Externally published	Yes

Keywords

CdTe thin film
oxygen incorporation
SEM
X-ray diffraction

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10.1088/1674-4926/36/5/054001

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@article{e501831c5d974e1fb8c26a708e160506,

title = "Deposition and doping of CdS/CdTe thin film solar cells",

abstract = "1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O2-free devices are compared after CdCl2 treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current-voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices.",

keywords = "CdTe thin film, oxygen incorporation, SEM, X-ray diffraction",

author = "Gorji, {Nima E.}",

note = "Publisher Copyright: {\textcopyright} 2015 Chinese Institute of Electronics.",

year = "2015",

month = may,

day = "1",

doi = "10.1088/1674-4926/36/5/054001",

language = "English",

volume = "36",

journal = "Journal of Semiconductors",

issn = "1674-4926",

publisher = "IOS Press BV",

number = "5",

}

TY - JOUR

T1 - Deposition and doping of CdS/CdTe thin film solar cells

AU - Gorji, Nima E.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - 1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O2-free devices are compared after CdCl2 treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current-voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices.

AB - 1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O2-free devices are compared after CdCl2 treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current-voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices.

KW - CdTe thin film

KW - oxygen incorporation

KW - SEM

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84930267991&partnerID=8YFLogxK

U2 - 10.1088/1674-4926/36/5/054001

DO - 10.1088/1674-4926/36/5/054001

M3 - Article

AN - SCOPUS:84930267991

SN - 1674-4926

VL - 36

JO - Journal of Semiconductors

JF - Journal of Semiconductors

IS - 5

M1 - 054001

ER -

Deposition and doping of CdS/CdTe thin film solar cells

Abstract

Keywords

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