Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics

Mohammad Houshmand; M. Hossein Zandi; Nima E. Gorji

doi:10.1016/j.spmi.2015.09.023

Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics

Mohammad Houshmand, M. Hossein Zandi, Nima E. Gorji

Research output: Contribution to journal › Article › peer-review

Abstract

We propose single walled carbon nanotubes as the n-type window partner of CdTe layer in a conventional CdS/CdTe thin film solar cells. The semiconductor nanotubes have superior optical and electrical properties i.e. controllable high band gap, being highly conductive and non-diffusive (not mobile). We modeled current-voltage characteristics of hybrid SWCNT/CdTe structure using Sah-Noyce-Shockley theory instead of Schottky barrier theory. The former theory is rather strong since it is based on carrier transport in the depletion region of a pn junction and considers the defect density within the depletion width. Also, a time dependent approach is used to simulate the degradation of device metrics under bias, illumination and temperature. It is discussed how a nanolayer can reduce the degradation rate of a thin film solar cell by surpassing grain boundaries and mobile ions migration towards junction.

Original language	English
Pages (from-to)	365-370
Number of pages	6
Journal	Superlattices and Microstructures
Volume	88
DOIs	https://doi.org/10.1016/j.spmi.2015.09.023
Publication status	Published - 1 Dec 2015
Externally published	Yes

Keywords

CdTe
Degradation
Nanotube
Solar cell
Thin film

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10.1016/j.spmi.2015.09.023

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title = "Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics",

abstract = "We propose single walled carbon nanotubes as the n-type window partner of CdTe layer in a conventional CdS/CdTe thin film solar cells. The semiconductor nanotubes have superior optical and electrical properties i.e. controllable high band gap, being highly conductive and non-diffusive (not mobile). We modeled current-voltage characteristics of hybrid SWCNT/CdTe structure using Sah-Noyce-Shockley theory instead of Schottky barrier theory. The former theory is rather strong since it is based on carrier transport in the depletion region of a pn junction and considers the defect density within the depletion width. Also, a time dependent approach is used to simulate the degradation of device metrics under bias, illumination and temperature. It is discussed how a nanolayer can reduce the degradation rate of a thin film solar cell by surpassing grain boundaries and mobile ions migration towards junction.",

keywords = "CdTe, Degradation, Nanotube, Solar cell, Thin film",

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T1 - Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics

AU - Houshmand, Mohammad

AU - Zandi, M. Hossein

AU - Gorji, Nima E.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - We propose single walled carbon nanotubes as the n-type window partner of CdTe layer in a conventional CdS/CdTe thin film solar cells. The semiconductor nanotubes have superior optical and electrical properties i.e. controllable high band gap, being highly conductive and non-diffusive (not mobile). We modeled current-voltage characteristics of hybrid SWCNT/CdTe structure using Sah-Noyce-Shockley theory instead of Schottky barrier theory. The former theory is rather strong since it is based on carrier transport in the depletion region of a pn junction and considers the defect density within the depletion width. Also, a time dependent approach is used to simulate the degradation of device metrics under bias, illumination and temperature. It is discussed how a nanolayer can reduce the degradation rate of a thin film solar cell by surpassing grain boundaries and mobile ions migration towards junction.

AB - We propose single walled carbon nanotubes as the n-type window partner of CdTe layer in a conventional CdS/CdTe thin film solar cells. The semiconductor nanotubes have superior optical and electrical properties i.e. controllable high band gap, being highly conductive and non-diffusive (not mobile). We modeled current-voltage characteristics of hybrid SWCNT/CdTe structure using Sah-Noyce-Shockley theory instead of Schottky barrier theory. The former theory is rather strong since it is based on carrier transport in the depletion region of a pn junction and considers the defect density within the depletion width. Also, a time dependent approach is used to simulate the degradation of device metrics under bias, illumination and temperature. It is discussed how a nanolayer can reduce the degradation rate of a thin film solar cell by surpassing grain boundaries and mobile ions migration towards junction.

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KW - Solar cell

KW - Thin film

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Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics

Abstract

Keywords

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