Controllable growth of vertically aligned graphene on C-face SiC

Yu Liu; Lianlian Chen; Donovan Hilliard; Qing Song Huang; Fang Liu; Mao Wang; Roman Böttger; René Hübner; Alpha T. N'Diaye; Elke Arenholz; Viton Heera; Wolfgang Skorupa; Shengqiang Zhou

doi:10.1038/srep34814

Controllable growth of vertically aligned graphene on C-face SiC

Yu Liu, Lianlian Chen, Donovan Hilliard, Qing Song Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N'Diaye, Elke Arenholz, Viton Heera, Wolfgang Skorupa, Shengqiang Zhou

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.

Original language	English
Article number	34814
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep34814
Publication status	Published - 6 Oct 2016

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title = "Controllable growth of vertically aligned graphene on C-face SiC",

abstract = "We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.",

author = "Yu Liu and Lianlian Chen and Donovan Hilliard and Huang, \{Qing Song\} and Fang Liu and Mao Wang and Roman B{\"o}ttger and Ren{\'e} H{\"u}bner and N'Diaye, \{Alpha T.\} and Elke Arenholz and Viton Heera and Wolfgang Skorupa and Shengqiang Zhou",

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year = "2016",

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day = "6",

doi = "10.1038/srep34814",

language = "English",

volume = "6",

journal = "Scientific Reports",

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T1 - Controllable growth of vertically aligned graphene on C-face SiC

AU - Liu, Yu

AU - Chen, Lianlian

AU - Hilliard, Donovan

AU - Huang, Qing Song

AU - Liu, Fang

AU - Wang, Mao

AU - Böttger, Roman

AU - Hübner, René

AU - N'Diaye, Alpha T.

AU - Arenholz, Elke

AU - Heera, Viton

AU - Skorupa, Wolfgang

AU - Zhou, Shengqiang

PY - 2016/10/6

Y1 - 2016/10/6

N2 - We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.

AB - We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.

UR - https://www.scopus.com/pages/publications/84990829187

U2 - 10.1038/srep34814

DO - 10.1038/srep34814

M3 - Article

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 34814

ER -

Controllable growth of vertically aligned graphene on C-face SiC

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