TY - JOUR
T1 - Concentration effects on the efficiency, thickness and JV characteristics of the intermediate band solar cells
AU - Es'Haghi Gorji, Nima
AU - Hossein Zandi, Mohammad
AU - Houshmand, Mohammad
AU - Abrari, Masoud
AU - Abaei, Behnam
PY - 2011/2
Y1 - 2011/2
N2 - The JV characteristics and efficiency as a function of active region thickness of the p-i-n intermediate band solar cells have been calculated. We compared the maximum efficiency point of three different cells made of well-known materials. Each cell includes a different size of quantum dot from other cells in the i-region which causes a different intermediate band position in the bandgap of the host semiconductor. In addition, it is illustrated that the maximum efficiency point increases with increasing the incident light concentration in the radiative limit. This article considered that using light concentrators can be useful to enhance the efficiency of the solar cell with respect to manufacturing and cost improvements.
AB - The JV characteristics and efficiency as a function of active region thickness of the p-i-n intermediate band solar cells have been calculated. We compared the maximum efficiency point of three different cells made of well-known materials. Each cell includes a different size of quantum dot from other cells in the i-region which causes a different intermediate band position in the bandgap of the host semiconductor. In addition, it is illustrated that the maximum efficiency point increases with increasing the incident light concentration in the radiative limit. This article considered that using light concentrators can be useful to enhance the efficiency of the solar cell with respect to manufacturing and cost improvements.
UR - http://www.scopus.com/inward/record.url?scp=79551571755&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2010.11.032
DO - 10.1016/j.physe.2010.11.032
M3 - Article
AN - SCOPUS:79551571755
SN - 1386-9477
VL - 43
SP - 989
EP - 993
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 4
ER -