Abstract
In a recent paper [V.A. Krasnov et al., Curr. Appl. Phys. 15 (2015) 504-510], Krasnov et al., derived an equation for the recombination lifetime (τ0) dependency on the temperature and applied voltage of the wide band gap P+-n GaP junctions. They stared with Sah-Noyce-Shockley (SNS) theory based on the Shockley-Read-Hall (SRH) recombination in the Space Charge Region (SCR). However, they used a rather simplified version of the recombination mechanism to derive the recombination lifetime. This comment is to correct the derived Eq. (4) in [V.A. Krasnov et al., Curr. Appl. Phys. 15 (2015) 504-510] which neglects the pre-exponential (dependent on (Eg-2δμ)-1/2 and also exponential factor (exp(qV/nkT)-1) in the SNS theory. Also, the presence of different trap levels and uncompensated defect density (NB) within the band gap was ignored and the rise in τ0 under higher FB was related to narrowed SCR and gradually increased nonequilibrium charge carriers that no more recombine and cause increased τ0. This is incorrect. This overestimation occur by ignoring the variation in the ideality factor under bias and temperature. Also by calculating the recombination rate for the different trap levels and densities. The thermal sensitivity of τ0 is corrected to be due to the presence of shallow levels in the bandgap.
Original language | English |
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Pages (from-to) | 366-368 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 159 |
DOIs |
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Publication status | Published - 16 Jul 2015 |
Externally published | Yes |
Keywords
- Defect level
- GaP- P+n junction
- Recombination lifetime
- Temperature