Abstract
In a recent paper Yang et al. (Mater Lett 2015; 145 236-238), presented their Photoluminescence (PL) and Electroluminsece (EL) measurements, respectively, on the interface states (IF) and defect density of the ZnO/CdS/CIGS solar cells. Also CV measurements to obtain the defect density (Na) and Built-in voltage (Vbi) was reported. The authors failed to interpret the results correctly despite a quite complete characterization was performed. The comment is on their interpretation of the variation in defect density and origin of the EL peaks upon applying forward bias.
| Original language | English |
|---|---|
| Pages (from-to) | 27-29 |
| Number of pages | 3 |
| Journal | Materials Letters |
| Volume | 155 |
| DOIs |
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| Publication status | Published - 10 May 2015 |
| Externally published | Yes |
Keywords
- CIGS layer
- EL
- Interface state
- PL
- solar cell