Comment on "Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence": Materials Letters 145 (2015) 236-238

Research output: Contribution to journalComment/debate

Abstract

In a recent paper Yang et al. (Mater Lett 2015; 145 236-238), presented their Photoluminescence (PL) and Electroluminsece (EL) measurements, respectively, on the interface states (IF) and defect density of the ZnO/CdS/CIGS solar cells. Also CV measurements to obtain the defect density (Na) and Built-in voltage (Vbi) was reported. The authors failed to interpret the results correctly despite a quite complete characterization was performed. The comment is on their interpretation of the variation in defect density and origin of the EL peaks upon applying forward bias.

Original languageEnglish
Pages (from-to)27-29
Number of pages3
JournalMaterials Letters
Volume155
DOIs
Publication statusPublished - 10 May 2015
Externally publishedYes

Keywords

  • CIGS layer
  • EL
  • Interface state
  • PL
  • solar cell

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