Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

H. Mosbahi; A. Essaoudi; N. E. Gorji; A. Gassoumi; A. Almohammedi; A. Helali; M. Gassoumi

doi:10.15251/JOR.2023.196.763

Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

H. Mosbahi, A. Essaoudi, N. E. Gorji, A. Gassoumi, A. Almohammedi, A. Helali, M. Gassoumi

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.

Original language	English
Pages (from-to)	763-773
Number of pages	11
Journal	Journal of Ovonic Research
Volume	19
Issue number	6
DOIs	https://doi.org/10.15251/JOR.2023.196.763
Publication status	Published - 1 Dec 2023

Keywords

AlGaN/GaN/Si HEMTs
Conductance
DC measurements
Dielectric measurements
DLTS
Electron trap
Impedance spectroscopy

Access to Document

10.15251/JOR.2023.196.763

Cite this

@article{a0bdf26cee29435aace2632955ab4f04,

title = "Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs",

abstract = "The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.",

keywords = "AlGaN/GaN/Si HEMTs, Conductance, DC measurements, Dielectric measurements, DLTS, Electron trap, Impedance spectroscopy",

author = "H. Mosbahi and A. Essaoudi and Gorji, \{N. E.\} and A. Gassoumi and A. Almohammedi and A. Helali and M. Gassoumi",

year = "2023",

month = dec,

day = "1",

doi = "10.15251/JOR.2023.196.763",

language = "English",

volume = "19",

pages = "763--773",

journal = "Journal of Ovonic Research",

issn = "1842-2403",

publisher = "S.C. Virtual Company of Physics S.R.L ",

number = "6",

}

TY - JOUR

T1 - Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

AU - Mosbahi, H.

AU - Essaoudi, A.

AU - Gorji, N. E.

AU - Gassoumi, A.

AU - Almohammedi, A.

AU - Helali, A.

AU - Gassoumi, M.

PY - 2023/12/1

Y1 - 2023/12/1

N2 - The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.

AB - The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.

KW - AlGaN/GaN/Si HEMTs

KW - Conductance

KW - DC measurements

KW - Dielectric measurements

KW - DLTS

KW - Electron trap

KW - Impedance spectroscopy

UR - https://www.scopus.com/pages/publications/85179725997

U2 - 10.15251/JOR.2023.196.763

DO - 10.15251/JOR.2023.196.763

M3 - Article

AN - SCOPUS:85179725997

SN - 1842-2403

VL - 19

SP - 763

EP - 773

JO - Journal of Ovonic Research

JF - Journal of Ovonic Research

IS - 6

ER -

Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

Abstract

Keywords

Access to Document

Fingerprint

Cite this