Characterisation of Glasgow/CNM Double-Sided 3D Sensors

Aaron Mac Raighne, K. Akiba, J. P. Balbuena, R. Bates, M. Van Beuzekom, J. Buytaert, P. Collins, M. Crossley, R. Dumps, L. Eklund, C. Fleta, A. Gallas, M. Gersabeck, V. V. Gligorov, M. John, M. Köhler, M. Lozano, D. Maneuski, U. Parzefall, D. QuirionR. Plackett, C. Parkes, G. Pellegrini, E. Rodrigues, G. Stewart

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    3D detectors are proposed as an alternative to planar silicon technology to withstand the high radiation environments in planned future high energy physics experiments. Here we review the characterization of double-sided 3D detectors designed and built at CNM and the University of Glasgow. A non-irradiated sensor is characterized in a pion test-beamutilizing the Timepix telescope. The charge collection and detection efficiency across the unit pixel are shown. Area of inefficiency can be found at the columnar electrodes at perpendicular angles of beam incidence while the pixels are shown to be fully efficient at angles greater than ten degrees. A reduction in charge sharing compared to the planar technology is also demonstrated. Charge collection studies on irradiated devices with a Sr-90 source show higher charge collection efficiency for 3D over planar sensors at significantly lower applied bias. The sub-pixel response is probed by a micro-focused laser beam demonstrating areas of charge multiplication at high bias voltages.

    Original languageEnglish
    Pages (from-to)1016-1023
    Number of pages8
    JournalPhysics Procedia
    Volume37
    DOIs
    Publication statusPublished - 2012
    Event2nd International Conference on Technology and Instrumentation in Particle Physics, TIPP 2011 - Chicago, United States
    Duration: 9 Jun 201114 Jun 2011

    Keywords

    • 3D sensors
    • high energy physics detectors
    • radiation-hardness
    • silicon detectors

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