A model for the voltammetric behaviour of TiO2 memristors

John F. Cassidy; Daryl Fox; Anthony J. Betts

doi:10.1007/s10008-015-3109-z

A model for the voltammetric behaviour of TiO₂ memristors

John F. Cassidy, Daryl Fox, Anthony J. Betts

Research output: Contribution to journal › Article › peer-review

Abstract

A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

Original language	English
Pages (from-to)	1229-1234
Number of pages	6
Journal	Journal of Solid State Electrochemistry
Volume	20
Issue number	5
DOIs	https://doi.org/10.1007/s10008-015-3109-z
Publication status	Published - 1 May 2016

Keywords

Digital simulation
Memristor
Nernst Planck equation
Titanium dioxide

Access to Document

10.1007/s10008-015-3109-z

https://arrow.tudublin.ie/scschcpsart/57Licence: CC BY-NC-SA

Cite this

@article{04b85295ebed491195e95135fc2c8963,

title = "A model for the voltammetric behaviour of TiO2 memristors",

abstract = "A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.",

keywords = "Digital simulation, Memristor, Nernst Planck equation, Titanium dioxide",

author = "Cassidy, \{John F.\} and Daryl Fox and Betts, \{Anthony J.\}",

note = "Publisher Copyright: {\textcopyright} 2016, Springer-Verlag Berlin Heidelberg.",

year = "2016",

month = may,

day = "1",

doi = "10.1007/s10008-015-3109-z",

language = "English",

volume = "20",

pages = "1229--1234",

journal = "Journal of Solid State Electrochemistry",

issn = "1432-8488",

publisher = "Springer Verlag",

number = "5",

}

TY - JOUR

T1 - A model for the voltammetric behaviour of TiO2 memristors

AU - Cassidy, John F.

AU - Fox, Daryl

AU - Betts, Anthony J.

PY - 2016/5/1

Y1 - 2016/5/1

N2 - A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

AB - A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

KW - Digital simulation

KW - Memristor

KW - Nernst Planck equation

KW - Titanium dioxide

UR - https://www.scopus.com/pages/publications/84954324546

U2 - 10.1007/s10008-015-3109-z

DO - 10.1007/s10008-015-3109-z

M3 - Article

AN - SCOPUS:84954324546

SN - 1432-8488

VL - 20

SP - 1229

EP - 1234

JO - Journal of Solid State Electrochemistry

JF - Journal of Solid State Electrochemistry

IS - 5

ER -