A model for the voltammetric behaviour of TiO2 memristors

John F. Cassidy; Daryl Fox; Anthony J. Betts

doi:10.1007/s10008-015-3109-z

A model for the voltammetric behaviour of TiO₂ memristors

John F. Cassidy, Daryl Fox, Anthony J. Betts

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

Original language	English
Pages (from-to)	1229-1234
Number of pages	6
Journal	Journal of Solid State Electrochemistry
Volume	20
Issue number	5
DOIs	https://doi.org/10.1007/s10008-015-3109-z
Publication status	Published - 1 May 2016

Keywords

Digital simulation
Memristor
Nernst Planck equation
Titanium dioxide

Access to Document

10.1007/s10008-015-3109-z

https://arrow.tudublin.ie/scschcpsart/57Licence: CC BY-NC-SA

Cite this

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AU - Fox, Daryl

AU - Betts, Anthony J.

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N2 - A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

AB - A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

KW - Digital simulation

KW - Memristor

KW - Nernst Planck equation

KW - Titanium dioxide

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