TY - GEN
T1 - A 38 GHz on-chip antenna in 28-nm CMOS using artificial magnetic conductor for 5G wireless systems
AU - Hedayati, Mahsa Keshavarz
AU - Abdipour, Abdolali
AU - Shirazi, Reza Sarraf
AU - John, Matthias
AU - Ammann, Max J.
AU - Staszewski, Robert Bogdan
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/2
Y1 - 2016/7/2
N2 - This paper presents the first-ever millimeter wave on-chip antenna (AoC) in 28 nm CMOS technology. The addition of artificial magnetic conductor (AMC) can increase the antenna's power gain and radiation efficiency to-1.75 dBi and 22%, respectively, with an occupied area of 0.95 mm×4.75 mm at 38 GHz. This structure is intended for fully integrated single-chip nanometer CMOS transceivers for 5G communication systems.
AB - This paper presents the first-ever millimeter wave on-chip antenna (AoC) in 28 nm CMOS technology. The addition of artificial magnetic conductor (AMC) can increase the antenna's power gain and radiation efficiency to-1.75 dBi and 22%, respectively, with an occupied area of 0.95 mm×4.75 mm at 38 GHz. This structure is intended for fully integrated single-chip nanometer CMOS transceivers for 5G communication systems.
KW - 28 nm CMOS
KW - Fifth Generation (5G) wireless
KW - artificial magnetic conductor (AMC)
KW - on-chip antenna (AoC)
UR - https://www.scopus.com/pages/publications/85016311225
U2 - 10.1109/MMWaTT.2016.7869869
DO - 10.1109/MMWaTT.2016.7869869
M3 - Conference contribution
AN - SCOPUS:85016311225
T3 - Conference on Millimeter-Wave and Terahertz Technologies, MMWaTT
SP - 29
EP - 32
BT - 4th International Conference on Millimeter-Wave and Terahertz Technologies, MMWaTT 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Conference on Millimeter-Wave and Terahertz Technologies, MMWaTT 2016
Y2 - 20 December 2016 through 22 December 2016
ER -